Processing technologies for advanced Ge devices

• Main Authors: Loo, R, Hikavyy, A.Y, Witters, L, Schulze, A, Arimura, H, Cott, D, Mitard, J, Porret, C, Mertens, H, Ryan, P, Wall, J, Matney, K, Wormington, M, Favia, P, Richard, O, Bender, H, Thean, A, Horiguchi, N, Mocuta, D, Collaert, N
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: Electrochemical Society 2020
• Subjects: Chemical vapor deposition; Epitaxial growth; FinFET; Germanium; Nanowires; Device processing; FinFETs; Gate-all-around; High mobility channels; High-mobility groups; Process Technologies; Processing technologies; Strained layers; Budget control
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/183582
• Institution: National University of Singapore

10.1149/2.0301612jss