Aggressive Leakage Current Reduction for Embedded MRAM Using Block-Level Power Gating
10.1109/iecon43393.2020.9254774
Saved in:
Main Authors: | Anh, Tuan Do, Fong, Xuanyao, Li, Fei |
---|---|
Other Authors: | ELECTRICAL AND COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
IEEE
2023
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/245796 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Device/Circuit/Architecture Co-Design of Reliable STT-MRAM
by: Pajouhi, Zoha, et al.
Published: (2019) -
Highly Reliable Memory-based Physical Unclonable Function Using Spin-Transfer Torque MRAM
by: Zhang, Le, et al.
Published: (2019) -
Low-power Robust Complementary Polarizer STT-MRAM (CPSTT) for On-chip Caches
by: Fong, Xuanyao, et al.
Published: (2019) -
R-MRAM: A ROM-Embedded STT MRAM Cache
by: Lee, Dongsoo, et al.
Published: (2019) -
Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches
by: Fong, Xuanyao, et al.
Published: (2019)