Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

10.1063/1.2924412

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書目詳細資料
Main Authors:	Lin, F., Xiang, N., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A., Chen, P., Chow, S.Y.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/50857
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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