A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET

A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET

10.1016/j.sse.2008.07.007

Saved in:
Bibliographic Details
Main Authors: Zhang, G., Yoo, W.J., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Carrier lifetimes
Metal-oxide-semiconductor field-effect transistor
Silicon-on-insulator
Time-dependent technique
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54834
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1016/j.sse.2008.07.007

Similar Items