A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET

A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET

10.1016/j.sse.2008.07.007

Saved in:
書目詳細資料
Main Authors: Zhang, G., Yoo, W.J., Ling, C.H.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
主題:
Carrier lifetimes
Metal-oxide-semiconductor field-effect transistor
Silicon-on-insulator
Time-dependent technique
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/54834
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!

因特網

http://scholarbank.nus.edu.sg/handle/10635/54834

相似書籍