Characterization and reliability study of low temperature hermetic wafer level bonding using In/Sn interlayer and Cu/Ni/Au metallization

Characterization and reliability study of low temperature hermetic wafer level bonding using In/Sn interlayer and Cu/Ni/Au metallization

10.1016/j.jallcom.2009.05.136

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Bibliographic Details
Main Authors: Yu, D.-Q., Lee, C., Yan, L.L., Thew, M.L., Lau, J.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Hermeticity
In-Sn
Intermetallic compound
Low-temperature bonding
WLP
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55269
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Institution: National University of Singapore
Description
Summary:10.1016/j.jallcom.2009.05.136

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