Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

10.1063/1.2823606

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Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55627
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-55627
record_format	dspace
spelling	sg-nus-scholar.10635-556272024-11-09T07:32:26Z Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2823606 Applied Physics Letters 91 24 - APPLA 2014-06-17T02:45:17Z 2014-06-17T02:45:17Z 2007 Article Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2007). Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2823606 00036951 http://scholarbank.nus.edu.sg/handle/10635/55627 000251678700077 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2823606
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C.
format	Article
author	Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
author_sort	Toh, E.-H.
title	Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
title_short	Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
title_full	Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
title_fullStr	Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
title_full_unstemmed	Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
title_sort	device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/55627
_version_	1821204515663118336

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

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