Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
10.1063/1.2402943
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| Main Authors: | , , , , , , |
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| 其他作者: | |
| 格式: | Article |
| 出版: |
2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/57826 |
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| 機構: | National University of Singapore |
| 總結: | 10.1063/1.2402943 |
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