The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

10.1016/j.mseb.2008.09.028

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Main Authors: Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Dong, G., Chan, L., Srinivasan, M.P.
Other Authors: PHYSICS
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/64709
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spelling sg-nus-scholar.10635-647092023-10-29T21:30:33Z The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding Yeong, S.H. Colombeau, B. Mok, K.R.C. Benistant, F. Liu, C.J. Wee, A.T.S. Dong, G. Chan, L. Srinivasan, M.P. PHYSICS CHEMICAL & BIOMOLECULAR ENGINEERING Activation/deactivation Defect End-of-range N co-implantation Transient enhanced diffusion 10.1016/j.mseb.2008.09.028 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 154-155 1-3 43-48 MSBTE 2014-06-17T07:50:22Z 2014-06-17T07:50:22Z 2008-12-05 Article Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Dong, G., Chan, L., Srinivasan, M.P. (2008-12-05). The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 154-155 (1-3) : 43-48. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2008.09.028 09215107 http://scholarbank.nus.edu.sg/handle/10635/64709 000262187600009 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Activation/deactivation
Defect
End-of-range
N co-implantation
Transient enhanced diffusion
spellingShingle Activation/deactivation
Defect
End-of-range
N co-implantation
Transient enhanced diffusion
Yeong, S.H.
Colombeau, B.
Mok, K.R.C.
Benistant, F.
Liu, C.J.
Wee, A.T.S.
Dong, G.
Chan, L.
Srinivasan, M.P.
The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
description 10.1016/j.mseb.2008.09.028
author2 PHYSICS
author_facet PHYSICS
Yeong, S.H.
Colombeau, B.
Mok, K.R.C.
Benistant, F.
Liu, C.J.
Wee, A.T.S.
Dong, G.
Chan, L.
Srinivasan, M.P.
format Article
author Yeong, S.H.
Colombeau, B.
Mok, K.R.C.
Benistant, F.
Liu, C.J.
Wee, A.T.S.
Dong, G.
Chan, L.
Srinivasan, M.P.
author_sort Yeong, S.H.
title The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
title_short The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
title_full The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
title_fullStr The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
title_full_unstemmed The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
title_sort impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/64709
_version_ 1781782476047253504