The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

• Main Authors: Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Dong, G., Chan, L., Srinivasan, M.P.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Activation/deactivation; Defect; End-of-range; N co-implantation; Transient enhanced diffusion
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/64709
• Institution: National University of Singapore

10.1016/j.mseb.2008.09.028