Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurements

Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurements

10.1117/12.404874

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Bibliographic Details
Main Authors: Chu, L.W., Pey, K.L., Chim, W.K., Loh, S.K., Er, E.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Electromigration
Interconnects
Low frequency noise
Reliability
Resistance
Voids
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72615
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Institution: National University of Singapore
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Summary:10.1117/12.404874

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