High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Toh, S.L., Li, K., Ang, C.H., Er, E., Redkar, S., Loh, K.P., Boothroyd, C.B., Chan, L.
Other Authors: CHEMISTRY
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/77450
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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