Hot-electron degradation in NMOSFET's: Results from temperature anneal

10.1109/16.293364

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Bibliographic Details
Main Authors:	Ling, C.H., Ah, L.K., Choi, W.K., Tan, S.E., Ang, D.S.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80548
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Institution:	National University of Singapore

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Summary:	10.1109/16.293364

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