Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation

Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation

Materials Science and Engineering B

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Bibliographic Details
Main Authors: Ho, C.S., Pey, K.L., Wong, H., Karunasiri, R.P.G., Chua, S.J., Lee, K.H., Chan, L.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Amorphization
Argon
CMOS technology
Ion-implantation
Nitrogen
SALICIDE
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80613
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Institution: National University of Singapore
Description
Summary:Materials Science and Engineering B

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