Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation

Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation

Materials Science and Engineering B

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Main Authors: Ho, C.S., Pey, K.L., Wong, H., Karunasiri, R.P.G., Chua, S.J., Lee, K.H., Chan, L.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Amorphization
Argon
CMOS technology
Ion-implantation
Nitrogen
SALICIDE
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80613
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-806132015-01-07T17:00:19Z Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation Ho, C.S. Pey, K.L. Wong, H. Karunasiri, R.P.G. Chua, S.J. Lee, K.H. Chan, L.H. ELECTRICAL ENGINEERING Amorphization Argon CMOS technology Ion-implantation Nitrogen SALICIDE Materials Science and Engineering B 51 1-3 274-279 2014-10-07T02:59:26Z 2014-10-07T02:59:26Z 1998-02-27 Article Ho, C.S.,Pey, K.L.,Wong, H.,Karunasiri, R.P.G.,Chua, S.J.,Lee, K.H.,Chan, L.H. (1998-02-27). Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation. Materials Science and Engineering B 51 (1-3) : 274-279. ScholarBank@NUS Repository. 09215107 http://scholarbank.nus.edu.sg/handle/10635/80613 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Amorphization
Argon
CMOS technology
Ion-implantation
Nitrogen
SALICIDE
spellingShingle Amorphization
Argon
CMOS technology
Ion-implantation
Nitrogen
SALICIDE
Ho, C.S.
Pey, K.L.
Wong, H.
Karunasiri, R.P.G.
Chua, S.J.
Lee, K.H.
Chan, L.H.
Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
description Materials Science and Engineering B
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ho, C.S.
Pey, K.L.
Wong, H.
Karunasiri, R.P.G.
Chua, S.J.
Lee, K.H.
Chan, L.H.
format Article
author Ho, C.S.
Pey, K.L.
Wong, H.
Karunasiri, R.P.G.
Chua, S.J.
Lee, K.H.
Chan, L.H.
author_sort Ho, C.S.
title Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
title_short Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
title_full Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
title_fullStr Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
title_full_unstemmed Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
title_sort integration of salicide process for deep-submicron cmos technology: effect of nitrogen/argon-amorphized implant on salicide formation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80613
_version_ 1681088920159256576

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