Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation
Materials Science and Engineering B
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Main Authors: | Ho, C.S., Pey, K.L., Wong, H., Karunasiri, R.P.G., Chua, S.J., Lee, K.H., Chan, L.H. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80613 |
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Institution: | National University of Singapore |
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