Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscope

Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscope

Scanning Microscopy

Saved in:
Bibliographic Details
Main Authors: Pey, K.L., Phang, J.C.H., Chan, D.S.H., Balk, L.J., Jakubowicz, A., Bresse, J.F., Myhajlenko, S.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Article
Published: 2014
Subjects:
Cathodoluminescence
cathodoluminescence contrast
dislocation
GaAs
preferential etching
scanning electron microscope
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80632
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Similar Items

Similar Items