Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction

10.1149/1.1798191

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Bibliographic Details
Main Authors:	Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81331
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81331
record_format	dspace
spelling	sg-nus-scholar.10635-813312023-10-29T23:07:48Z Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction Ho, C.S. Pey, K.L. Tung, C.H. Zhang, B.C. Tee, K.C. Karunasiri, G. Chua, S.J. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.1798191 Electrochemical and Solid-State Letters 7 11 H49-H51 ESLEF 2014-10-07T03:07:09Z 2014-10-07T03:07:09Z 2004 Article Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J. (2004). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction. Electrochemical and Solid-State Letters 7 (11) : H49-H51. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1798191 10990062 http://scholarbank.nus.edu.sg/handle/10635/81331 000228539900049 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.1798191
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ho, C.S. Pey, K.L. Tung, C.H. Zhang, B.C. Tee, K.C. Karunasiri, G. Chua, S.J.
format	Article
author	Ho, C.S. Pey, K.L. Tung, C.H. Zhang, B.C. Tee, K.C. Karunasiri, G. Chua, S.J.
spellingShingle	Ho, C.S. Pey, K.L. Tung, C.H. Zhang, B.C. Tee, K.C. Karunasiri, G. Chua, S.J. Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
author_sort	Ho, C.S.
title	Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
title_short	Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
title_full	Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
title_fullStr	Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
title_full_unstemmed	Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
title_sort	uniform void-free epitaxial cosi 2 formation on sti bounded narrow si(loo) lines by template layer stress reduction
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81331
_version_	1781783983770566656

Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction

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