Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
10.1149/1.1798191
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Main Authors: | Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81331 |
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Institution: | National University of Singapore |
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