Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction

• Main Authors: Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81331
• Institution: National University of Singapore

10.1149/1.1798191