Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction

• Main Authors: Ho, C.S., Pey, K.L., Tung, C.H., Zhang, B.C., Tee, K.C., Karunasiri, G., Chua, S.J.
• 其他作者: ELECTRICAL ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/81331

10.1149/1.1798191