A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

• Main Authors: Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Bipolar; resistive random access memory (RRAM); resistive switching (RS); self-rectifying
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81909
• Institution: National University of Singapore

10.1109/LED.2012.2210855