B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: Effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process
10.1088/0957-4484/18/27/275302
Saved in:
Main Authors: | Whang, S.-J., Lee, S., Chi, D.-Z., Yang, W.-F., Cho, B.-J., Liew, Y.-F., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82006 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Doping of Al-catalyzed vapor-liquid-solid grown Si nanowires
by: Whang, S.J., et al.
Published: (2014) -
Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire
by: Yang, W.F., et al.
Published: (2014) -
Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire
by: Whang, S.J., et al.
Published: (2014) -
High quality single crystal Al-catalyzed Si nanowire
by: Whang, S.J., et al.
Published: (2014) -
In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
by: Han, G., et al.
Published: (2014)