Border-trap characterization in high-κ strained-Si MOSFETs

10.1109/LED.2007.902086

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Bibliographic Details
Main Authors:	Maji, D., Duttagupta, S.P., Rao, V.R., Yeo, C.C., Cho, B.-J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	1/f noise Border traps Charge pumping Hysteresis Interface trapping Strained-Si
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82018
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Institution:	National University of Singapore

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Summary:	10.1109/LED.2007.902086

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