Border-trap characterization in high-κ strained-Si MOSFETs
10.1109/LED.2007.902086
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sg-nus-scholar.10635-820182023-10-26T22:07:55Z Border-trap characterization in high-κ strained-Si MOSFETs Maji, D. Duttagupta, S.P. Rao, V.R. Yeo, C.C. Cho, B.-J. ELECTRICAL & COMPUTER ENGINEERING 1/f noise Border traps Charge pumping Hysteresis Interface trapping Strained-Si 10.1109/LED.2007.902086 IEEE Electron Device Letters 28 8 731-733 EDLED 2014-10-07T04:24:25Z 2014-10-07T04:24:25Z 2007-08 Article Maji, D., Duttagupta, S.P., Rao, V.R., Yeo, C.C., Cho, B.-J. (2007-08). Border-trap characterization in high-κ strained-Si MOSFETs. IEEE Electron Device Letters 28 (8) : 731-733. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.902086 07413106 http://scholarbank.nus.edu.sg/handle/10635/82018 000248315400021 Scopus |
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1/f noise Border traps Charge pumping Hysteresis Interface trapping Strained-Si |
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1/f noise Border traps Charge pumping Hysteresis Interface trapping Strained-Si Maji, D. Duttagupta, S.P. Rao, V.R. Yeo, C.C. Cho, B.-J. Border-trap characterization in high-κ strained-Si MOSFETs |
description |
10.1109/LED.2007.902086 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING Maji, D. Duttagupta, S.P. Rao, V.R. Yeo, C.C. Cho, B.-J. |
format |
Article |
author |
Maji, D. Duttagupta, S.P. Rao, V.R. Yeo, C.C. Cho, B.-J. |
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Maji, D. |
title |
Border-trap characterization in high-κ strained-Si MOSFETs |
title_short |
Border-trap characterization in high-κ strained-Si MOSFETs |
title_full |
Border-trap characterization in high-κ strained-Si MOSFETs |
title_fullStr |
Border-trap characterization in high-κ strained-Si MOSFETs |
title_full_unstemmed |
Border-trap characterization in high-κ strained-Si MOSFETs |
title_sort |
border-trap characterization in high-κ strained-si mosfets |
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2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/82018 |
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