Border-trap characterization in high-κ strained-Si MOSFETs

• Main Authors: Maji, D., Duttagupta, S.P., Rao, V.R., Yeo, C.C., Cho, B.-J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: 1/f noise; Border traps; Charge pumping; Hysteresis; Interface trapping; Strained-Si
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82018
• Institution: National University of Singapore

10.1109/LED.2007.902086