Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations
10.1109/LED.2008.920277
Saved in:
Main Authors: | Wang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Loh, T.H., Yu, M.B., Lee, S.J., Lo, G.-Q., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82302 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide
by: Wang, J., et al.
Published: (2014) -
Saturation of the non-linear absorption in n-i-p-i multiple quantum well structures
by: Xiaohong, T., et al.
Published: (2014) -
Optoelectronic monolithic integration of metal-germanium- metal photodetector and Ge CMOSFETs on Si wafer
by: ZANG HUI
Published: (2010) -
GeSn lateral p-i-n photodetector on insulating substrate
by: Xu, Shengqiang, et al.
Published: (2019) -
Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication
by: Cheng, Chin-Yuan, et al.
Published: (2020)