Gate-induced drain leakage current enhanced by plasma charging damage
10.1109/16.918252
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sg-nus-scholar.10635-824012023-10-25T22:04:43Z Gate-induced drain leakage current enhanced by plasma charging damage Ma, S. Zhang, Y. Li, M.F. Li, W. Xie, J. Sheng, G.T.T. Yen, A.C. Wang, J.L.F. ELECTRICAL & COMPUTER ENGINEERING CMOSFET Leakage current Plasma charging damage 10.1109/16.918252 IEEE Transactions on Electron Devices 48 5 1006-1008 IETDA 2014-10-07T04:28:58Z 2014-10-07T04:28:58Z 2001-05 Article Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F. (2001-05). Gate-induced drain leakage current enhanced by plasma charging damage. IEEE Transactions on Electron Devices 48 (5) : 1006-1008. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918252 00189383 http://scholarbank.nus.edu.sg/handle/10635/82401 000168361000027 Scopus |
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CMOSFET Leakage current Plasma charging damage |
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CMOSFET Leakage current Plasma charging damage Ma, S. Zhang, Y. Li, M.F. Li, W. Xie, J. Sheng, G.T.T. Yen, A.C. Wang, J.L.F. Gate-induced drain leakage current enhanced by plasma charging damage |
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10.1109/16.918252 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Ma, S. Zhang, Y. Li, M.F. Li, W. Xie, J. Sheng, G.T.T. Yen, A.C. Wang, J.L.F. |
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Ma, S. Zhang, Y. Li, M.F. Li, W. Xie, J. Sheng, G.T.T. Yen, A.C. Wang, J.L.F. |
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Ma, S. |
title |
Gate-induced drain leakage current enhanced by plasma charging damage |
title_short |
Gate-induced drain leakage current enhanced by plasma charging damage |
title_full |
Gate-induced drain leakage current enhanced by plasma charging damage |
title_fullStr |
Gate-induced drain leakage current enhanced by plasma charging damage |
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Gate-induced drain leakage current enhanced by plasma charging damage |
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gate-induced drain leakage current enhanced by plasma charging damage |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/82401 |
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