Gate-induced drain leakage current enhanced by plasma charging damage

Gate-induced drain leakage current enhanced by plasma charging damage

10.1109/16.918252

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Bibliographic Details
Main Authors: Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOSFET
Leakage current
Plasma charging damage
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82401
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Institution: National University of Singapore

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