Gate-induced drain leakage current enhanced by plasma charging damage

Gate-induced drain leakage current enhanced by plasma charging damage

10.1109/16.918252

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書目詳細資料
Main Authors:	Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	CMOSFET Leakage current Plasma charging damage
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82401
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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