Gate-induced drain leakage current enhanced by plasma charging damage

• Main Authors: Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: CMOSFET; Leakage current; Plasma charging damage
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82401
• 機構: National University of Singapore

10.1109/16.918252