Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability

Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability

10.1149/1.1455824

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Bibliographic Details
Main Authors: Lin, W.H., Pey, K.L., Dong, Z., Lim, V.S.K., Chooi, S.Y.M., Zhou, M.S., Ang, C.H., Ang, T.C., Lau, W.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82500
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Institution: National University of Singapore
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Summary:10.1149/1.1455824

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