Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability

10.1149/1.1455824

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Bibliographic Details
Main Authors:	Lin, W.H., Pey, K.L., Dong, Z., Lim, V.S.K., Chooi, S.Y.M., Zhou, M.S., Ang, C.H., Ang, T.C., Lau, W.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82500
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82500
record_format	dspace
spelling	sg-nus-scholar.10635-825002023-10-26T07:58:53Z Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability Lin, W.H. Pey, K.L. Dong, Z. Lim, V.S.K. Chooi, S.Y.M. Zhou, M.S. Ang, C.H. Ang, T.C. Lau, W.S. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.1455824 Electrochemical and Solid-State Letters 5 4 F7-F9 ESLEF 2014-10-07T04:30:07Z 2014-10-07T04:30:07Z 2002-04 Article Lin, W.H., Pey, K.L., Dong, Z., Lim, V.S.K., Chooi, S.Y.M., Zhou, M.S., Ang, C.H., Ang, T.C., Lau, W.S. (2002-04). Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability. Electrochemical and Solid-State Letters 5 (4) : F7-F9. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1455824 10990062 http://scholarbank.nus.edu.sg/handle/10635/82500 000175314300013 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.1455824
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lin, W.H. Pey, K.L. Dong, Z. Lim, V.S.K. Chooi, S.Y.M. Zhou, M.S. Ang, C.H. Ang, T.C. Lau, W.S.
format	Article
author	Lin, W.H. Pey, K.L. Dong, Z. Lim, V.S.K. Chooi, S.Y.M. Zhou, M.S. Ang, C.H. Ang, T.C. Lau, W.S.
spellingShingle	Lin, W.H. Pey, K.L. Dong, Z. Lim, V.S.K. Chooi, S.Y.M. Zhou, M.S. Ang, C.H. Ang, T.C. Lau, W.S. Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
author_sort	Lin, W.H.
title	Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
title_short	Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
title_full	Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
title_fullStr	Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
title_full_unstemmed	Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
title_sort	impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82500
_version_	1781784156609445888

Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability

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