Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

10.1088/0957-4484/18/6/065302

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Bibliographic Details
Main Authors: Chew, H.G., Zheng, F., Choi, W.K., Chim, W.K., Foo, Y.L., Fitzgerald, E.A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82536
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Institution: National University of Singapore

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