Investigation of electrical properties of furnace grown gate oxide on strained-Si

• Main Authors: Bera, L.K., Mathew, S., Balasubramanian, N., Leitz, C., Braithwaite, G., Singaporewala, F., Yap, J., Carlin, J., Langdo, T., Lochtefeld, T., Currie, M., Hammond, R., Fiorenza, J., Badawi, H., Bulsara, M.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Gate oxide; Ge-diffusion; SiGe; Strained-Si
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82569
• Institution: National University of Singapore

10.1016/j.tsf.2004.05.028