Investigation of electrical properties of furnace grown gate oxide on strained-Si

Investigation of electrical properties of furnace grown gate oxide on strained-Si

10.1016/j.tsf.2004.05.028

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Bibliographic Details
Main Authors:	Bera, L.K., Mathew, S., Balasubramanian, N., Leitz, C., Braithwaite, G., Singaporewala, F., Yap, J., Carlin, J., Langdo, T., Lochtefeld, T., Currie, M., Hammond, R., Fiorenza, J., Badawi, H., Bulsara, M.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Gate oxide Ge-diffusion SiGe Strained-Si
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82569
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Institution:	National University of Singapore

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