Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs

Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs

10.1109/LED.2008.2001029

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Bibliographic Details
Main Authors: Liu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Germanium (Ge) enrichment
Laser annealing (LA)
Strained transistor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82604
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2008.2001029

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