Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs
10.1109/LED.2008.2001029
Saved in:
Main Authors: | Liu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82604 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
by: Wang, G.H., et al.
Published: (2014) -
Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
by: Ang, K.-W., et al.
Published: (2014) -
Formation of Ultra-Shallow Junctions in Silicon- Germanium by Pulsed Laser Annealing
by: ABIDHA BEGUM
Published: (2010) -
Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
by: Wang, G.H., et al.
Published: (2014) -
Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology
by: Wang, G.H., et al.
Published: (2014)