Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation

Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation

Journal of Electronic Materials

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Bibliographic Details
Main Authors: Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Dai, J.Y., See, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Agglomeration
Layer inversion
N2 + Implant
NiSi
Phase stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82761
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82761

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