Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation

Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantation

Journal of Electronic Materials

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Bibliographic Details
Main Authors:	Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Dai, J.Y., See, A.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Agglomeration Layer inversion N2 + Implant NiSi Phase stability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82761
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Institution:	National University of Singapore

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