Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

10.1109/LED.2008.2000716

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Bibliographic Details
Main Authors:	Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Ohmic contact Schottky barrier height Selenium (Se) segregation Silicon-carbon source/drain (S/D) stressor
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82786
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82786
record_format	dspace
spelling	sg-nus-scholar.10635-827862023-10-29T22:25:27Z Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors Wong, H.-S. Liu, F.-Y. Ang, K.-W. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Ohmic contact Schottky barrier height Selenium (Se) segregation Silicon-carbon source/drain (S/D) stressor 10.1109/LED.2008.2000716 IEEE Electron Device Letters 29 8 841-844 EDLED 2014-10-07T04:33:29Z 2014-10-07T04:33:29Z 2008-08 Article Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C. (2008-08). Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors. IEEE Electron Device Letters 29 (8) : 841-844. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000716 07413106 http://scholarbank.nus.edu.sg/handle/10635/82786 000258096000007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ohmic contact Schottky barrier height Selenium (Se) segregation Silicon-carbon source/drain (S/D) stressor
spellingShingle	Ohmic contact Schottky barrier height Selenium (Se) segregation Silicon-carbon source/drain (S/D) stressor Wong, H.-S. Liu, F.-Y. Ang, K.-W. Samudra, G. Yeo, Y.-C. Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
description	10.1109/LED.2008.2000716
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wong, H.-S. Liu, F.-Y. Ang, K.-W. Samudra, G. Yeo, Y.-C.
format	Article
author	Wong, H.-S. Liu, F.-Y. Ang, K.-W. Samudra, G. Yeo, Y.-C.
author_sort	Wong, H.-S.
title	Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
title_short	Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
title_full	Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
title_fullStr	Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
title_full_unstemmed	Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
title_sort	novel nickel silicide contact technology using selenium segregation for soi n-fets with silicon-carbon source/drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82786
_version_	1781784222958092288

Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

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