Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

10.1109/LED.2008.2000716

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Bibliographic Details
Main Authors: Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ohmic contact
Schottky barrier height
Selenium (Se) segregation
Silicon-carbon source/drain (S/D) stressor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82786
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Institution: National University of Singapore

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