Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

• Main Authors: Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Ohmic contact; Schottky barrier height; Selenium (Se) segregation; Silicon-carbon source/drain (S/D) stressor
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82786
• Institution: National University of Singapore

10.1109/LED.2008.2000716