Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

• Main Authors: Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Ohmic contact; Schottky barrier height; Selenium (Se) segregation; Silicon-carbon source/drain (S/D) stressor
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82786

10.1109/LED.2008.2000716