Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

10.1109/LED.2008.920275

Saved in:
Bibliographic Details
Main Authors: Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Laser anneal
Mobility
Series resistance
Silicon-carbon
Strain
Transistors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82945
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-82945
record_format dspace
spelling sg-nus-scholar.10635-829452024-11-11T07:46:33Z Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration Koh, A.T.-Y. Lee, R.T.-P. Liu, F.-Y. Liow, T.-Y. Tan, K.M. Wang, X. Samudra, G.S. Balasubramanian, N. Chi, D.-Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Laser anneal Mobility Series resistance Silicon-carbon Strain Transistors 10.1109/LED.2008.920275 IEEE Electron Device Letters 29 5 464-467 EDLED 2014-10-07T04:35:23Z 2014-10-07T04:35:23Z 2008-05 Article Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C. (2008-05). Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration. IEEE Electron Device Letters 29 (5) : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920275 07413106 http://scholarbank.nus.edu.sg/handle/10635/82945 000255317400014 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Laser anneal
Mobility
Series resistance
Silicon-carbon
Strain
Transistors
spellingShingle Laser anneal
Mobility
Series resistance
Silicon-carbon
Strain
Transistors
Koh, A.T.-Y.
Lee, R.T.-P.
Liu, F.-Y.
Liow, T.-Y.
Tan, K.M.
Wang, X.
Samudra, G.S.
Balasubramanian, N.
Chi, D.-Z.
Yeo, Y.-C.
Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
description 10.1109/LED.2008.920275
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Koh, A.T.-Y.
Lee, R.T.-P.
Liu, F.-Y.
Liow, T.-Y.
Tan, K.M.
Wang, X.
Samudra, G.S.
Balasubramanian, N.
Chi, D.-Z.
Yeo, Y.-C.
format Article
author Koh, A.T.-Y.
Lee, R.T.-P.
Liu, F.-Y.
Liow, T.-Y.
Tan, K.M.
Wang, X.
Samudra, G.S.
Balasubramanian, N.
Chi, D.-Z.
Yeo, Y.-C.
author_sort Koh, A.T.-Y.
title Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
title_short Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
title_full Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
title_fullStr Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
title_full_unstemmed Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
title_sort pulsed laser annealing of silicon-carbon source/drain in mugfets for enhanced dopant activation and high substitutional carbon concentration
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82945
_version_ 1821229268626046976

Similar Items