Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

10.1109/LED.2008.920275

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Bibliographic Details
Main Authors: Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Laser anneal
Mobility
Series resistance
Silicon-carbon
Strain
Transistors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82945
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Institution: National University of Singapore

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