The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

10.1016/j.tsf.2004.05.047

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Main Authors:	Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	In-situ annealing Ni germanide Ni germanosilicide Ni silicide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83175
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83175
record_format	dspace
spelling	sg-nus-scholar.10635-831752023-10-25T22:57:42Z The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Chi, D.Z. Tung, C.H. ELECTRICAL & COMPUTER ENGINEERING In-situ annealing Ni germanide Ni germanosilicide Ni silicide 10.1016/j.tsf.2004.05.047 Thin Solid Films 462-463 SPEC. ISS. 151-155 THSFA 2014-10-07T04:38:10Z 2014-10-07T04:38:10Z 2004-09 Article Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H. (2004-09). The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C. Thin Solid Films 462-463 (SPEC. ISS.) : 151-155. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.047 00406090 http://scholarbank.nus.edu.sg/handle/10635/83175 000223812800032 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	In-situ annealing Ni germanide Ni germanosilicide Ni silicide
spellingShingle	In-situ annealing Ni germanide Ni germanosilicide Ni silicide Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Chi, D.Z. Tung, C.H. The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
description	10.1016/j.tsf.2004.05.047
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Chi, D.Z. Tung, C.H.
format	Article
author	Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Chi, D.Z. Tung, C.H.
author_sort	Jin, L.J.
title	The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
title_short	The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
title_full	The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
title_fullStr	The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
title_full_unstemmed	The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C
title_sort	interfacial reaction of ni with (111)ge, (100)si0.75ge 0.25 and (100)si at 400 °c
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83175
_version_	1781784320761921536

The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

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