The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

• Main Authors: Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Tung, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: In-situ annealing; Ni germanide; Ni germanosilicide; Ni silicide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83175
• Institution: National University of Singapore

10.1016/j.tsf.2004.05.047