Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process

10.1149/1.2052051

Saved in:

Bibliographic Details
Main Authors:	Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83243
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83243
record_format	dspace
spelling	sg-nus-scholar.10635-832432024-11-11T07:32:22Z Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Liu, X.Y. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2052051 Electrochemical and Solid-State Letters 8 11 G311-G313 ESLEF 2014-10-07T04:38:59Z 2014-10-07T04:38:59Z 2005 Article Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L. (2005). Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process. Electrochemical and Solid-State Letters 8 (11) : G311-G313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2052051 10990062 http://scholarbank.nus.edu.sg/handle/10635/83243 000232340900032 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.2052051
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Liu, X.Y. Kwong, D.-L.
format	Article
author	Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Liu, X.Y. Kwong, D.-L.
spellingShingle	Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Liu, X.Y. Kwong, D.-L. Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
author_sort	Kang, J.F.
title	Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
title_short	Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
title_full	Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
title_fullStr	Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
title_full_unstemmed	Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
title_sort	ultrathin hfo2(eot < 0.75 nm) gate stack with tan/hfn electrodes fabricated using a high-temperature process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83243
_version_	1821227782400638976

Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process

Similar Items