Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process

• Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83243
• Institution: National University of Singapore

10.1149/1.2052051